Measurement of Thickness of High-Resistivity Substrate By Photoconduction Enhanced Capacitance Displacement Sensor T. -H. Lee and M. -C. Lin ECS Transactions 2017 77 (11), 1747-1752
Nanoscale Layer Transfer by Hydrogen Ion-Cut Processing: A Brief Review Through Recent U.S. Patents Benjamin T.-H. Lee Recent Patents on Nanotechnology 2017 11(1), 42-49
Eliminating Thickness Measurement Uncertainty of Capacitive Displacement Sensor in High Resistivity Substrate by Photoconduction Benjamin T.-H. Lee and M. -C. Lin ECS Journal of Solid State Science and Technology 2017 6(5) 323-325
Sharpening Si nanocrystals on the bulk surface by nanoscale electrochemistry thru controlling the hole current with the irradiation of near-infrared laser C.-C. Chiang and T. -H. Lee JOURNAL OF THE ELECTROCHEMICAL SOCIETY 2016 163 ( 9), E258-E262
Inhibition Effect of a Laser on Thickness Increase of P-type Porous Silicon in Electrochemical Anodizing C. -C. Chiang , Pi-Chun Juan, and T. -H. Lee Journal of the Electrochemical Society 2016 163 (5) H265-H268
The Suppression Effect of 830nm Laser Irradiation on Porous Silicon Formation C. -C. Chiang, Y.-C Huang, P.- C. Juan, F. -S. Lo, and T. -H. Lee ECS Transactions 2015 69(35): 1-7
Modeling a thermionic energy converter using finite-difference time-domain particle-in-cell simulations F. -S. Lo, P. S. Lu, B. Ragan-Kelley, A. Minnich, T. -H. Lee, M. C. Lin, and J. P. Verboncoeur Physics of Plasma 2014 21, 023510
Effect of Microwave Processing on Oxygen Plasma-Assisted Bonding Enabling Rapid Layer Transfer C. -C. Ho, F. S. Lo, S. C. Jeng, J. -H. Li, H. -H. Chang, and T. -H. Lee ECS Solid State Letters 2014 3(1) P4-P6
Increasing More Bonding Energy in Nitrogen Plasma-activated Wafer Bonding by HF-dip F. -S. Lo, C. C. Chiang, C. Li, and T. -H. Lee ECS Solid-State Letters 2014 3 (8) P102-P104
Thermal Stress Induced Thin Film Transfer from Single-crystal Silicon Layer on Sapphire Substrate F. S. Lo, R. Y. Xu, C. C. Ho, C. Li, and T. -H. Lee Integrated Ferroelectrics 2013 144.1: 73-78